T-ELSC40 - Single-Crystal Diamond, Nitrogen-Vacancy Center Density: ≤0.03 ppb, 4.0 mm x 4.0 mm x 0.5 mm
Product Drawing
- Low Nitrogen-Vacancy (NV) Center Density: ≤0.03 ppb
- Available in Three Sizes:
- 2.0 mm x 2.0 mm Square
- 4.0 mm x 4.0 mm Square
- 4.5 mm x 4.5 mm Square
-
These electronic-grade, single-crystal diamonds contain ≤5 ppb nitrogen concentration and typically ≤0.03 ppb nitrogen-vacancy (NV) concentration. Additionally, the diamonds have a very low background impurity of <1 ppb boron concentration and exhibit electron mobility that is typically greater than 2000 cm2/V⋅s. These diamonds allow the user to probe the as-grown NV defects or generate their own via ion implantation or epitaxial growth. Alternatively, they can be used as a high thermal conductivity and optically transparent heat sink for a high power laser or microelectronic device, as well as for custom-made diamond electronic devices such as radiation detectors. The diamonds are offered as 2.0 mm x 2.0 mm, 4.0 mm x 4.0 mm, or 4.5 mm x 4.5 mm squares.
| Item # |
ELSC40 |
|
Crystallographic (Face) Orientation
|
{100} ± 3° |
|
Edge Orientation
|
<110> |
|
Dimensions
Length and Width Measured on the Smaller Face
|
Length |
4.0 +0.2/-0.0 mm |
| Width |
4.0 +0.2/-0.0 mm |
| Thickness |
0.5 ± 0.05 mm |
|
Laser Kerf
|
≤5° |
| Edge Features |
<0.2 mm |
| Roughness, Ra |
<5 nm |
| Boron Concentration |
<1 ppb |
| Nitrogen Concentration |
≤5 ppb |
| Typical NV Concentration |
≤0.03 ppb |
| 13C Fraction |
1.1% |
